Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer
Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer
复制标题
使用有机硅烷缓冲层在标称同轴 Si(001) 衬底上形成准单畴 3C-SiC
DOI：
10.1063/1.1564861
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
M. Suemitsu
中科院分区：
文献类型：
--
作者：
H. Nakazawa;M. Suemitsu
在名义上同轴的Si（001）衬底上成功地生长了准单畴3C-SiC薄膜。起始面为2×1准单畴或2×1+1×2双畴。这里的要点是使用衬底的直流电阻加热，并使用单甲基硅烷（H3 C-SiH 3）形成低温（650 °C）界面缓冲层。直流电阻加热可在2×1+1×2双畴Si（001）衬底上形成单畴Si（001）-2 1或1×2起始表面或形成单畴3C-SiC（001）-2 3或3×2表面。当使用单畴Si（001）起始表面时，在3C-SiC膜中决定主畴的不是生长期间的直流极性而是起始表面的表面重构。单畴3C-SiC薄膜的厚度为45-200 nm，比以前研究中所要求的厚度（>5 μm）小了三个数量级。
Quasi-single-domain 3C-SiC films have been successfully grown on nominally on-axis Si(001) substrate. The starting surface is either of 2×1 quasi-single-domain or of 2×1+1×2 double-domain. The point here is to use dc-resistive heating of the substrate and to form a low-temperature (650 °C) interfacial buffer layer using monomethylsilane (H3 C-SiH3). The dc resistive heating serves to form a single-domain Si(001)-2×1 or 1×2 starting surface or to develop a single-domain 3C-SiC(001)-2×3 or 3×2 surface on a 2×1+1×2 double-domain Si(001) substrate. When a single-domain Si(001) starting surface is utilized, it is not the dc polarity during growth but the surface reconstruction of the starting surface that determines the dominant domain in the 3C-SiC film. The thickness of the single-domain 3C-SiC film is as thin as ∼45–200 nm, which is about three orders of magnitude smaller than that required in a previous study (>5 μm).