Single-pulse femtosecond laser ablation of monocrystalline silicon: A modeling and experimental study
Single-pulse femtosecond laser ablation of monocrystalline silicon: A modeling and experimental study
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DOI：
10.1016/j.apsusc.2021.151722
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发表时间：
2021-11-16
影响因子：
6.7
通讯作者：
Chen, Yuan Liu
中科院分区：
文献类型：
--
作者：
Chen, Chong;Zhang, Fan;Chen, Yuan Liu
本文利用COMSOL (R)多物理场建立了一个可视化模型，研究了单脉冲飞秒激光参数与烧蚀单晶硅微孔几何形状之间的定量关系。用不同的飞秒激光单脉冲能量烧蚀单晶硅，并将得到的微孔直径和深度与建立的可视化模型的预测结果进行了比较。对比结果表明，基于所建立的可视化模型可以有效地预测单脉冲飞秒激光烧蚀结果。在未进行优化实验的情况下，对烧蚀微孔直径和深度的预测误差分别在2.31%和15.40%以内。因此，利用适当的参数，无需像传统飞秒激光烧蚀技术那样反复试验，就可以精确地对单晶硅进行飞秒激光烧蚀，以获得所需的几何形状。
In this paper, a visualization model by using the COMSOL (R) Multiphysics was established to investigate the quantitative relationship between the parameters of the single-pulse femtosecond laser and the geometries of the ablated monocrystalline silicon micro-holes. Monocrystalline silicon was ablated with different femtosecond laser single-pulse energies and the diameters as well as the depths of the obtained micro-holes were compared with the prediction results of the established visualization model. The comparison results have demonstrated that the single-pulse femtosecond laser ablation results can be predicted effectively based on the established visualization model. The prediction error of the ablated micro-hole diameter and depth were within 2.31% and 15.40%, respectively, without any prior optimization experiments. It is thus possible to precisely conduct femtosecond laser ablation on monocrystalline silicon for desired geometries by utilizing appropriate parameters without trial-and-errors as in traditional femtosecond laser ablation technologies.