Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition
Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition
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DOI：
10.1143/jjap.45.8388
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发表时间：
2006-10
影响因子：
1.5
通讯作者：
Haiping Zhou;K. Elgaid;C. Wilkinson;I. Thayne
中科院分区：
文献类型：
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作者：
Haiping Zhou;K. Elgaid;C. Wilkinson;I. Thayne
本文介绍了一种新型的室温电感耦合等离子体化学气相沉积（ICP-CVD）技术，该技术可制备出氢含量小于3at. %.通过能量色散X射线（EDX）分析、二次离子质谱（西姆斯）、X射线光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）分析了薄膜的化学组成和键合。用椭圆偏振法测得的薄膜光学指数与薄膜组成有很好的相关性。在分子束外延（MBE）生长的GaAs基高电子迁移率晶体管（HEMT）层结构的货车德堡样品上观察到非常小的等离子体诱导损伤。在金属-绝缘体-金属（MIM）电容器结构中，用ICP-CVD方法制备了厚度为1.5 nm的SiN薄膜，并观察到了大于4×106 V cm-1的击穿电场。该技术已成功地纳入III-V MMIC工艺流程，为实现基于阵列的MMIC提供了显著的灵活性。
A novel room-temperature inductively coupled plasma chemical vapour deposition (ICP–CVD) technique has been developed, which yielded high-quality silicon nitride (SiN) films with a hydrogen content of less than 3 at. %. The chemical composition and bonding of the films were analysed by energy dispersive X-ray (EDX) analysis, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR). The film optical indexes measured by ellipsometry were well correlated with film composition. Very little plasma-induced damage was observed on Van de Pauw samples of GaAs-based high-electron-mobility transistor (HEMT) layer structures grown by molecular beam epitaxy (MBE). Breakdown electric field >4×106 V cm-1 was observed for an ultrathin 5 nm room-temperature-grown ICP–CVD SiN film embedded in a metal-insulator-metal (MIM) capacitor structure. This technique has been successfully incorporated into the III–V MMIC process flow to provide significant flexibility towards realising array-based MMICs.