Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots
Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots
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单层和垂直堆叠椭圆InAs量子点电子和偏振特性的原子理论研究
DOI:
10.1103/physrevb.86.155444
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发表时间:
2012
影响因子:
3.7
通讯作者:
M. Usman
中科院分区:
文献类型:
--
作者:
M. Usman
The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a QD system, the shape asymmetry is a critical factor. We perform multi-million-atom simulations to study the impact of the elliptical shapes on the electronic and polarization properties of single and vertically stacked InAs QDs. The comparison between a low aspect ratio (AR) and a high AR QD reveals that the electronic and the polarization properties strongly depend on the AR of the QD; the elongation of a tall QD allows tuning of the DOPover a much wider range. We then extend our analysis to an experimentally reported vertical stack of nine QDs (9-VSQDs) that has shown significant potential to achieve isotropic polarization properties. We analyze the contribution from the shape asymmetry in the large, experimentally measured, in-plane polarization anisotropy. Our analysis shows that the orientation of the base elongation controls the sign of the DOP; however, the magnitude of the base elongation has only a very little impact on the magnitude of the DOP. We further predict that the elliptical shape of the 9-VSQDs can only tune either DOPor DOPfor the isotropic response. Our model results, in agreement with the TEM findings, suggest that the experimentally grown 9-VSQDs has either a circular or a slightly [10] elongated base. Overall, the detailed investigation of DOPas a function of the QD shape asymmetry provides a theoretical guidance for the continuing experimental efforts to achieve tailored polarization properties from QD nanostructures for the design of optical devices.