Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
复制标题
通过超高压退火在 GaN 中注入 Mg 的原子尺度研究
DOI：
10.1063/5.0087248
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发表时间：
2022
影响因子：
3.2
通讯作者：
K. Hono
中科院分区：
文献类型：
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作者：
Jun Uzuhashi;Jun Chen;Ashutosh Kumar;W. Yi;T. Ohkubo;R. Tanaka;S. Takashima;M. Edo;K. Sierakowski;M. Boćkowski;Hideki Sakurai;T. Kachi;T. Sekiguchi;K. Hono
通过离子注入的区域选择性掺杂是实现氮化镓（GaN）基节能功率器件的关键技术;然而，常规退火导致形成大量富Mg缺陷，这导致低效的p型激活。最近发明的超高压退火（UHPA）使得p型激活效率得到显著提高。在这项研究中，我们研究了Mg注入GaN中富Mg缺陷的形成，然后在常规大气压或超高压下退火。与常规退火不同，UHPA导致Mg富集缺陷的数量密度低得多。相关的扫描透射电子显微镜，原子探针断层扫描，阴极发光，和二次离子质谱分析表明，镁富集缺陷的数量密度基本上被抑制的UHPA。常规样品和UHPA样品的GaN基质中溶解的Mg浓度几乎相同，约为2 × 1018 cm-3;然而，UHPA样品显示出比常规样品强一个数量级的施主-受主对发射强度。因此，通过UHPA技术，注入的Mg被有效地激活为受体。
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; however, conventional annealing leads to the formation of numerous Mg-enriched defects, which result in inefficient p-type activation. The recent invention of ultra-high-pressure annealing (UHPA) has enabled a significant improvement in p-type activation efficiency. In this study, we investigated the formation of Mg-enriched defects in Mg implanted GaN followed by annealing under either conventional atmospheric pressure or ultra-high-pressure. Unlike the conventional annealing, UHPA leads to a much lower number density of Mg-enriched defects. Correlative scanning transmission electron microscopy, atom probe tomography, cathodoluminescence, and secondary ion mass spectrometry analyses have shown that the number density of Mg-enriched defects is substantially suppressed by the UHPA. The dissolved Mg concentrations in the GaN matrix for both the conventional and the UHPA samples are almost of the same value, approximately 2 × 1018 cm−3; however, the UHPA sample shows over one order of magnitude stronger intensity of donor–acceptor-pair emission than the conventional one. Thus, the implanted Mg is effectively activated as acceptors through the UHPA technique.