Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2
Uniaxial magnetic anisotropy of epitaxial Fe films on InAs(100)-4×2 and GaAs(100)-4×2
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DOI：
10.1063/1.372625
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发表时间：
2000-04
影响因子：
3.2
通讯作者：
Yongbing Xu;D. Freeland;M. Tselepi;J. Bland
中科院分区：
文献类型：
--
作者：
Yongbing Xu;D. Freeland;M. Tselepi;J. Bland
The evolution of the uniaxial magnetic anisotropy of ultrathin epitaxial Fe films grown on InAs(100)-4×2 and GaAs(100)-4×2 has been studied in situ by means of the magneto-optical Kerr effect. In Fe/InAs(100)-4×2, the uniaxial magnetic anisotropy easy axis direction along [011] was found to be rotated 90° compared with that of Fe/GaAs(100)-4×2 along [011]. Real-time reflection high energy electron diffraction measurements of Fe/InAs(100)-4×2 show that the lattice constant of the epitaxial Fe films relaxes remarkedly faster along the [011] direction than along the [011] direction in the same thickness range where the uniaxial magnetic anisotropy occurs. These results suggest that the symmetry-breaking atomic scale structure of the reconstructed semiconductor surface gives rise to the uniaxial magnetic anisotropy in a ferromagnetic metal/semiconductor heterostructure via surface magneto-elastic interactions.
