Synthesis of High‐Quality Wurtzite Cu2ZnSn(S1−x,Sex)4 Nanocrystals With Non‐Toxic Selenium Precursor and the Photoelectrochemical Performance of ZnO NAs/CZTSSe Heterojunction
Synthesis of High‐Quality Wurtzite Cu2ZnSn(S1−x,Sex)4 Nanocrystals With Non‐Toxic Selenium Precursor and the Photoelectrochemical Performance of ZnO NAs/CZTSSe Heterojunction
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DOI：
10.1002/solr.201800015
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发表时间：
2018-07
期刊：
影响因子：
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通讯作者：
Yao Gao;Jilin Wang;Shuyi Mo;Fuwen Wang;F. Long;Z. Zou
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文献类型：
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作者：
Yao Gao;Jilin Wang;Shuyi Mo;Fuwen Wang;F. Long;Z. Zou
用环境友好的纳米晶体墨水制造高性能 CZTSSe 吸收材料对于大规模制造生产非常重要。在此，利用十二烷硫醇（DDT）和硒十八胺（Se-ODA）分别作为硫源和硒源，成功合成了小尺寸的高质量亚稳态纤锌矿Cu2ZnSnS4（W-CZTS）和纤锌矿Cu2ZnSn（S1−x，Sex）4（W-CZTSSe）纳米晶。与W-CZTS纳米晶体墨水获得的薄膜相比，W-CZTSSe纳米晶体获得的薄膜中小颗粒层的厚度显着减小。此外，ZnO纳米阵列（NAs）/CZTSSe异质结薄膜生长在氟掺杂氧化锡（FTO）基板上，并且在光照下表现出优异的光电化学（PEC）性能。 ZnO NAs/CZTSSe异质结薄膜的光电流密度为3.44mAcm−2，比ZnO NAs的光电流密度高出近2.7倍。 ZnO NAs 和 ZnO NAs/CZTSSe 的 PEC 效率分别为 0.4% 和 1.89%。我们的结果表明，使用 Se-ODA 合成的 W-CZTSSe 纳米晶体是一种有前途的制备高性能薄膜的前驱体，Se-ODA 可用于制备硫族化物薄膜的前驱体（包括 CISe、CIGSe 和 CZTSSe）。
Fabrication of high performing CZTSSe absorber material from environmental benign nanocrystals ink is very important for large‐scale manufacturing production. Herein, the high‐quality metastable wurtzite Cu2ZnSnS4(W‐CZTS) and wurtzite Cu2ZnSn(S1−x,Sex)4(W‐CZTSSe) nanocrystals with small sizes have been synthesized successfully using dodecanethiol (DDT) and Se‐octadecylamine (Se‐ODA) as the sulfur and selenium sources, respectively. Compared to the thin film obtained from W‐CZTS nanocrystals ink, the thickness of small grain layer in the thin film obtained from W‐CZTSSe nanocrystals is reduced significantly. Further the ZnO nanoarrays (NAs)/CZTSSe heterojunction thin‐film grows on fluorine‐doped tin oxide (FTO) substrate and it exhibits superior photoelectrochemical (PEC) performance under light illumination. The ZnO NAs/CZTSSe heterojunction thin film shows the photocurrent density of 3.44 mA cm−2, which is nearly 2.7‐fold higher than the photocurrent density of ZnO NAs. The PEC efficiencies of ZnO NAs and ZnO NAs/CZTSSe are 0.4% and 1.89%, respectively. Our results demonstrate that the as‐synthesized W‐CZTSSe nanocrystals by using Se‐ODA are a promising precursor to fabricate high performing thin film, the Se‐ODA can be applied to prepare the precursors of chalcogenide thin film (including CISe, CIGSe, and CZTSSe).