Hole transport in boron delta-doped diamond structures
Hole transport in boron delta-doped diamond structures
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DOI：
10.1063/1.4758994
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发表时间：
2012-10-15
影响因子：
4
通讯作者：
Pernot, J.
中科院分区：
文献类型：
--
作者：
Chicot, G.;Thi, T. N. Tran;Pernot, J.
在较大的温度范围内（6K < T < 500 K），研究了四种覆帽δ硼掺杂[100]取向脱膜的孔片密度和迁移率与温度的关系。在室温附近，金刚石衬底上生长的厚缓冲层的平行传导的影响不容忽视。这可能导致对三角洲层中空穴迁移率的错误估计。所研究的δ -层没有显示出任何量子约束对迁移率的增强，即使是厚度小于2 nm的δ -层也是如此。(C) 2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4758994]
The temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6K < T < 500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758994]