Plasma interaction with Zn nano layer on organic materials for analysis of early stage of inorganic/organic hybrid multi-layer formation
Plasma interaction with Zn nano layer on organic materials for analysis of early stage of inorganic/organic hybrid multi-layer formation
复制标题
等离子体与有机材料上的锌纳米层相互作用，用于分析无机/有机杂化多层形成的早期阶段
DOI：
10.1016/j.surfcoat.2012.05.126
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发表时间：
2013
影响因子：
5.4
通讯作者：
Yuichi Setsuhara
中科院分区：
文献类型：
--
作者：
Ken Cho;Kosuke Takenaka;Yuichi Setsuhara
基于硬 X 射线光电子能谱 (HXPES) 对 Zn/Alq3 界面化学键态的无损深度分析，研究了 Ar-O2 混合等离子体与三(8-羟基喹啉)铝 (Alq3) 上 Zn 薄膜之间的相互作用。在起飞角 (TOA)=20° 下测量的 HXPES Zn 2p3/2 光谱清楚地表明，Ar-O2 混合物等离子体暴露后 Zn-O 键显着增加。这一结果表明，由于 Zn 薄膜的氧化，Ar-O2 混合等离子体暴露使得在有机材料上形成 ZnO 薄膜成为可能。 TOA=80° 和 42° 下的 HXPES C 1s 光谱测量表明，Ar-O2 混合等离子体暴露不会对距 Zn/Alq3 界面约 20 nm 的区域内的化学键态造成显着损害。而 TOA=20° 下的 HXPES 测量结果表明，穿过 Zn 薄膜的氧自由基导致 Alq3 在距界面约几 nm 的较浅区域发生氧化。
Interactions between Ar-O2mixture plasmas and Zn thin film on Tris(8-hydroxyquinolinato) aluminium (Alq3) were investigated on the basis of nondestructive depth analyses of chemical bonding states at the Zn/Alq3interface via hard x-ray photoelectron spectroscopy (HXPES). The HXPES Zn 2p3/2spectrum measured at take-off angle (TOA)=20° clearly shows significant increase of the Zn–O bond after Ar–O2mixture plasma exposure. This result indicated that the Ar–O2mixture plasma exposure has made it possible to form ZnO thin films on organic materials due to oxidation of Zn thin film. The HXPES C 1s spectra measurement at TOA=80° and 42° indicated that the Ar–O2mixture plasma exposure does not give significant damage to the chemical bonding states in regions up to about 20nm from the Zn/Alq3interface. Whereas, the results of HXPES measurement at a TOA=20° suggested that the oxygen radicals through the Zn thin film cause oxidation of Alq3at shallower region up to about a few nm from the interface.