Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire Base
Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire Base
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量子阱和量子线基红外光电晶体管的比较研究
DOI：
10.1051/jp4:1996324
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
M. Ershov
中科院分区：
文献类型：
--
作者：
V. Ryzhii;I. Khmyrova;M. Ryzhii;M. Ershov
利用量子阱和量子线结构的红外光电晶体管，利用子带间电子跃迁，被认为是使用开发的分析模型。比较了所讨论的光电晶体管的暗电流和响应度。结果表明，量子线红外光电晶体管在低温下的性能优于量子阱红外光电晶体管。这是由于量子线中的电子的一维性质提供了更高的热激发能量，导致低暗电流和对垂直入射辐射的敏感性。
Infrared phototransistors based respectively on a quantum-well and a quantum-wire structures, utilizing intersubband electron transitions, are considered using developed analytical model. The dark currents and responsivities of the phototransistors in question are compared. It is shown that the quantum-wire infrared phototransistor can surpass the infrared phototransistor with a quantum well in performance especially at low temperatures. This is due to the one-dimensional nature of the electrons in the quantum-wires providing higher energy of thermal excitation, leading to low dark current and sensitivity to normal incident radiation.