Amorphization kinetics of germanium during ion implantation
Amorphization kinetics of germanium during ion implantation
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DOI：
10.1063/1.3041653
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发表时间：
2009-01-01
影响因子：
3.2
通讯作者：
Benassayag, G.
中科院分区：
文献类型：
--
作者：
Koffel, S.;Scheiblin, P.;Benassayag, G.
我们用透射电子显微镜实验研究了室温离子注入过程中Ge的非晶化动力学。我们发现，在硅中广泛使用的临界损伤能量密度模型也可以用在锗中，以预测离子注入导致的非晶层的存在、位置和扩展，几乎适用于本文和文献中报道的所有质量/能量/剂量组合。在锗中，晶态到非晶态的相变是通过损伤(点缺陷和/或团簇)的积累发生的，并且这种损伤随着剂量(损伤是相加的)线性增加，直到达到某个阈值，超过该阈值，材料变为非晶态。然而，对于像硼这样的轻离子，在室温下发生了非晶化，比预期的更接近表面。这表明这种注入产生的间隙和空位在室温下是不稳定的，并且在稀释级联中发生缺陷湮灭，直到形成稳定的络合物，可能是双间隙和双空位。(C)2009年美国物理研究所。[DOI：10.1063/1.3041653]
We have experimentally studied by using transmission electron microscopy the kinetics of Ge amorphization during ion implantation at room temperature. We show that the critical damage energy density model, widely used in silicon under this or different names, can also be used in germanium to predict the existence, position, and extension of amorphous layers resulting from the implantation of ions for almost all mass/energy/dose combinations reported here and in literature. In germanium, the crystalline to amorphous phase transition occurs through the accumulation of damage (point defects and/or clusters), and this damage linearly increases with the dose (the damage is additive) until a certain threshold is reached above which the material turns amorphous. However, for light ions such as boron amorphization occurs, at room temperature, closer to the surface than expected. This demonstrates that the interstitials and vacancies generated by such implants are not stable at room temperature and that defect annihilation occurs within dilute cascades until stable complexes are formed, probably di-interstitials and divacancies. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041653]