Back Cover: Recombination via point defects and their complexes in solar silicon (Phys. Status Solidi A 10/2012)
Back Cover: Recombination via point defects and their complexes in solar silicon (Phys. Status Solidi A 10/2012)
复制标题
封底：通过太阳能硅中的点缺陷及其复合物进行重组（Phys. Status Solidi A 10/2012）
DOI：
10.1002/pssa.201290026
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Peaker A
中科院分区：
文献类型：
--
作者：
Peaker A
电子级直拉硅和浮区硅在生长状态下具有非常低的复合产生中心浓度（通常<1010 cm-3）。因此，在使用这种材料的集成电路技术中，很少检测到电活性无意杂质和结构缺陷。对廉价光伏电池的追求导致了对太阳能应用的不太纯的硅、多晶材料和低成本加工的使用。以这种方式制造的细胞具有显著的外源重组机制。在本文中，我们审查涉及缺陷和杂质在单晶和多晶太阳能硅的复合。我们这项工作的主要技术是利用微波探测的光电导衰减和深能级瞬态谱（DLTS）的变体的复合寿命映射测量。特别是，我们使用拉普拉斯DLTS来区分孤立的点缺陷，小沉淀复合物和装饰扩展缺陷。我们比较了太阳能硅中一些常见的金属污染物的行为，它们对载流子寿命和电池效率的影响。最后，我们认为氢钝化的过渡金属污染物，晶界和位错的作用。我们得出结论，通过点缺陷的复合可能是显着的，但在大多数多晶材料中，主要的复合路径是通过晶粒内的装饰位错簇，对晶界的整体复合贡献很小。
Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <1010cm−3). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi‐crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi‐crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi‐crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries.