High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition.
High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition.
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DOI：
10.1002/adma.201501600
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发表时间：
2015-07-22
期刊：
影响因子：
--
通讯作者：
Craciun MF
中科院分区：
文献类型：
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作者：
Bointon TH;Barnes MD;Russo S;Craciun MF
演示了使用电阻加热冷壁化学气相沉积（CVD）来生长石墨烯。该技术比标准 CVD 快 100 倍，成本低 99%。对拉曼光谱、原子力显微镜、扫描电子显微镜和电磁输运测量的研究表明，冷壁 CVD 石墨烯的质量与天然石墨烯相当。最后，展示了第一个透明柔性石墨烯电容式触摸传感器。
The growth of graphene using resistive‐heating cold‐wall chemical vapor deposition (CVD) is demonstrated. This technique is 100 times faster and 99% lower cost than standard CVD. A study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and electrical magneto‐transport measurements shows that cold‐wall CVD graphene is of comparable quality to natural graphene. Finally, the first transparent flexible graphene capacitive touch‐sensor is demonstrated.