Direct observation of a dispersionless impurity band in hydrogenated graphene

Direct observation of a dispersionless impurity band in hydrogenated graphene
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DOI:
10.1103/physrevb.83.165433
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发表时间:
2011-04
期刊:
影响因子:
3.7
通讯作者:
D. Haberer;L. Petaccia;M. Farjam;S. Taioli;S. Jafari;A. Nefedov;Wenlong Zhang;L. Calliari;G. Scarduelli;B. Dóra;D. Vyalikh;T. Pichler;C. Wöll;D. Alfé;S. Simonucci;M. Dresselhaus;M. Knupfer;B. Büchner;A. Grüneis
D. Haberer;L. Petaccia;M. Farjam;S. Taioli;S. Jafari;A. Nefedov;Wenlong Zhang;L. Calliari;G. Scarduelli;B. Dóra;D. Vyalikh;T. Pichler;C. Wöll;D. Alfé;S. Simonucci;M. Dresselhaus;M. Knupfer;B. Büchner;A. Grüneis
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
D. Haberer;L. Petaccia;M. Farjam;S. Taioli;S. Jafari;A. Nefedov;Wenlong Zhang;L. Calliari;G. Scarduelli;B. Dóra;D. Vyalikh;T. Pichler;C. Wöll;D. Alfé;S. Simonucci;M. Dresselhaus;M. Knupfer;B. Büchner;A. Grüneis

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我们用角分辨光电子能谱研究了电子掺杂氢化单层石墨烯(H-石墨烯)的电子结构,发现了一个新的能带。它的占用可以用氢量控制,并允许调整石墨烯的掺杂水平。我们对H-石墨烯的电子结构的计算表明,这种状态主要由氢1 s轨道组成,并且尽管H的随机化学吸附,但对于低H覆盖率仍然保持扩展。通过未掺杂的H-石墨烯的X射线吸收研究提供了氢状态存在的进一步证据,其清楚地显示了在π * 共振附近出现的附加状态。
We show with angle-resolved photoemission spectroscopy that a new energy band appears in the electronic structure of electron-doped hydrogenated monolayer graphene (H-graphene). Its occupation can be controlled with the hydrogen amount and allows for tuning of graphene's doping level. Our calculations of the electronic structure of H-graphene suggest that this state is largely composed of hydrogen 1s orbitals and remains extended for low H coverages despite the random chemisorption of H. Further evidence for the existence of a hydrogen state is provided by x-ray absorption studies of undoped H-graphene which are clearly showing the emergence of an additional state in the vicinity of the pi* resonance.