Highly sensitive near IR detectors using n-type porous Si
Highly sensitive near IR detectors using n-type porous Si
复制标题
DOI：
10.1016/s0924-4247(02)00435-1
复制
发表时间：
2003-04-15
影响因子：
4.6
通讯作者：
Sheeni, NA
中科院分区：
文献类型：
--
作者：
Raissi, F;Sheeni, NA
多孔 n 型硅已用于制造 PtSi 肖特基探测器。通过在紫外辐射下进行阳极蚀刻，使n型Si衬底变得多孔。通过电沉积，微米尺寸的孔被 Pt 完全填充。退火并随后蚀刻掉多余的 Pt，在孔的整个表面上形成均匀的 PtSi 层。由 PtSi/多孔硅表面产生的肖特基结被反向偏置，并且其对 0.8-1.2μm 辐射的响应在背照模式下确定。 0.8 μm 下的响应度高达 100 A/W，相当于效率增益大于 90。这表明多孔样品中正在发生雪崩倍增等内部增益机制，这也得到了一般 I-V 特性的证实。讨论了这些探测器作为高灵敏度近红外探测器的用途。 (C) 2002 Elsevier Science B.V. 保留所有权利。
Porous n-type Si has been used to fabricate PtSi Schottky detectors. The n-type Si substrates were made porous by anodic etching under ultraviolet radiation. The micrometer size pores were completely filled by Pt through electrodeposition. After annealing and subsequent etching of excess Pt a uniform PtSi layer was formed over the entire surface of the pores. The Schottky junction resulting from PtSi/porous Si surface was reverse biased and its response to 0.8-1.2 mum of radiation was determined in back illumination mode. Responsivities as large as 100 A/W at 0.8 mum, corresponding to a gain larger than 90 in efficiency, were obtained. This indicates that an internal gain mechanism such as avalanche multiplication is occurring in the porous samples, which is also corroborated by the general I-V characteristics. The use of these detectors as highly sensitive near IR detectors is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.