Schottky contact on a ZnO (0001) single crystal with conducting polymer
Schottky contact on a ZnO (0001) single crystal with conducting polymer
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DOI：
10.1063/1.2789697
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发表时间：
2007-10-01
影响因子：
4
通讯作者：
Kawasaki, M.
中科院分区：
文献类型：
--
作者：
Nakano, M.;Tsukazaki, A.;Kawasaki, M.
通过旋涂商用导电聚合物聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸）（PEDOT：PSS）作为金属电极，在 ZnO（0001）块状单晶上制造高质量肖特基结。这些结点表现出出色的整流性能，典型理想因子为 1.2。肖特基势垒高度 (phi(b)) 和内建电势 (V-bi) 等参数在结之间的变化可以忽略不计。由 phi(b) 和 qV(bi) 值得出的 ZnO 的电子亲和势显示出轻微的偏差（类似于 0.2 eV），表明 ZnO (0001) 极性表面和阴离子 PSS 分子之间存在自发形成的界面偶极层。 (C) 2007 年美国物理研究所。
High quality Schottky junctions were fabricated on a ZnO (0001) bulk single crystal by spin coating a commercial conducting polymer, poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), as the metal electrodes. The junctions exhibited excellent rectifying behavior with a typical ideality factor of 1.2. Such parameters as Schottky barrier height (phi(b)) and built-in potential (V-bi) show negligible variation among junctions. The electron affinity of ZnO derived from phi(b) and qV(bi) values show a slight deviation (similar to 0.2 eV), suggesting the existence of spontaneously formed interfacial dipole layer between ZnO (0001) polar surface and anionic PSS molecules. (C) 2007 American Institute of Physics.