Initial surface roughening in Ge/Si(001) heteroepitaxy driven by step-vacancy line interaction.
Initial surface roughening in Ge/Si(001) heteroepitaxy driven by step-vacancy line interaction.
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DOI：
10.1103/physrevlett.91.176102
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发表时间：
2003-10
影响因子：
8.6
通讯作者：
P. Sutter;I. Schick;W. Ernst;E. Sutter
中科院分区：
文献类型：
--
作者：
P. Sutter;I. Schick;W. Ernst;E. Sutter
Ge在Si（001）上外延过程中的初始表面粗糙化是由S（A）表面台阶与二聚体空位线（VL）之间的有效排斥引起的。这种阶梯VL相互作用逐渐使生长前沿的吸附原子附着位点的相当大一部分失活，导致二维岛形核速率的快速增加。相互排斥阻碍了S（A）表面台阶在第二层中的VL上的交叉，从而将正在形成的表面粗糙度组织成各向异性2D台阶的周期性阵列。在该有序模板上的特定位点处形成的孤立的（105）小面介导第一3D Ge岛的组装。
The initial surface roughening during Ge epitaxy on Si(001) is shown to arise from an effective repulsion between S(A) surface steps and dimer vacancy lines (VLs). This step-VL interaction gradually inactivates a substantial fraction of adatom attachment sites at the growth front, causing a rapid increase in the rate of two-dimensional island nucleation. The mutual repulsion hinders the crossing of S(A) surface steps over VLs in the second layer, thus organizing the developing surface roughness into a periodic array of anisotropic 2D terraces. Isolated (105) facets forming at specific sites on this ordered template mediate the assembly of first 3D Ge islands.