Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition
Microstructure and properties of epitaxial antimony-doped p-type ZnO films fabricated by pulsed laser deposition
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DOI：
10.1063/1.2747669
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发表时间：
2007-06
影响因子：
4
通讯作者：
W. Guo;A. Allenic;Y. Chen;X. Pan;Y. Che;Z. Hu;B. Liu
中科院分区：
文献类型：
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作者：
W. Guo;A. Allenic;Y. Chen;X. Pan;Y. Che;Z. Hu;B. Liu
采用脉冲激光沉积法在（0001）蓝宝石衬底上外延生长了掺锑p型ZnO薄膜，沉积温度为400-600°C，氧气压力为5.0×10− 2 Torr，沉积后不进行退火处理。在600°C下生长的薄膜具有最高的空穴浓度1.9× 1017 cm −3（锑掺杂），霍尔迁移率7.7cm2 scinVs，电阻率4.2Ωcm。透射电子显微镜显示，p型导电性密切相关的高密度的缺陷，促进受体络合物的形成和补偿的本地浅施主。受主的热激活能为115± 5 meV，相应的光电离能为158± 7 meV。
Antimony-doped p-type ZnO films epitaxially grown on (0001) sapphire substrates were fabricated by pulsed laser deposition at 400–600°C in 5.0×10−2Torr oxygen without postdeposition annealing. The films grown at 600°C have among the highest reported hole concentration of 1.9×1017cm−3 for antimony doping, Hall mobility of 7.7cm2∕Vs, and resistivity of 4.2Ωcm. Transmission electron microscopy reveals that the p-type conductivity closely correlates to the high density of defects which facilitate the formation of acceptor complexes and the compensation of native shallow donors. The thermal activation energy of the acceptor was found to be 115±5meV and the corresponding optical ionization energy is ∼158±7meV.