Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film
Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film
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Hf0.5Zr0.5O2 薄膜中的机械偏振切换
DOI：
10.1021/acs.nanolett.2c01066
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发表时间：
2022-05-31
期刊：
影响因子：
10.8
通讯作者：
Duan, Chun-Gang
中科院分区：
文献类型：
--
作者：
Guan, Zhao;Li, Yun-Kangqi;Duan, Chun-Gang
近年来，与硅和互补金属氧化物半导体（CMOS）具有高相容性的hfo2基薄膜得到了广泛的研究。除了铁电性和反铁电性外，柔性电性，即极化和应变梯度之间的耦合，在hfo2基薄膜中很少被报道。本文通过原子力显微镜的尖端产生应力梯度，证明了在室温下，在10nm的HZO铁电薄膜中获得了机械书写的面外畴。扫描开尔文力显微镜（SKPM）的结果排除了柔性电机制的可能性，证明了机械书写可以避免电荷注入，从而揭示了真正的极化状态，促进了HZO薄膜更广泛的柔性电应用和超高密度存储。
HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO2-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.