Full band Monte Carlo study of high field transport in cubic phase silicon carbide
Full band Monte Carlo study of high field transport in cubic phase silicon carbide
复制标题
立方相碳化硅高场输运的全带蒙特卡罗研究
DOI：
10.1063/1.1554472
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发表时间：
2003
影响因子：
3.2
通讯作者：
K. Brennan
中科院分区：
文献类型：
--
作者：
H. Nilsson;U. Englund;M. Hjelm;E. Bellotti;K. Brennan
基于密度泛函理论的局域密度近似从头算能带结构计算，对3C-SiC中的电子输运进行了全带蒙特卡罗研究。散射率和碰撞电离跃迁率已从从头算带结构使用能量色散和数值波函数计算。这种方法将所需的经验参数的数量减少到最小。通过拟合模拟迁移率作为晶格温度的函数与实验数据，推导出了两个经验耦合常数。峰值速度约为2.2×107 cm/s，在600 kV/cm以上有明显的负微分迁移率。电子引发的碰撞电离系数被发现是2-10倍强于空穴引发的碰撞电离的报道值。
A full band Monte Carlo study of the electron transport in 3C–SiC is presented based on an ab initio band structure calculation using the local density approximation to the density functional theory. The scattering rates and impact ionization transition rates have been calculated numerically from the ab initio band structure using both energy dispersion and numerical wave functions. This approach reduces the number of empirical parameters needed to a minimum. The two empirical coupling constants used have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The peak velocity was found to be approximately 2.2×107 cm/s with a clear negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2–10 times stronger than the reported values for the hole initiated impact ionization.