Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
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DOI：
10.1063/1.372364
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发表时间：
2000-03
影响因子：
3.2
通讯作者：
T. Yoshimura;N. Fujimura;D. Ito;T. Ito
中科院分区：
文献类型：
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作者：
T. Yoshimura;N. Fujimura;D. Ito;T. Ito
采用Pt/YMnO 3/Y2 O3/Si结构研究了金属/铁电体/绝缘体/半导体（MFIS）结构的铁电性能。不仅Pt/YMnO_3（0001）/Y_2 O_3/Si电容器，而且Pt/amorphousYMnO_3/Y_2 O_3/Si电容器都观察到了铁电C-V电滞。用常规C-V测量方法评价的极化应包括界面极化、空间电荷重排以及铁电性自发极化。为了消除界面极化的产生和空间电荷的重排，应该用较短的充电时间来评价MFIS电容器的铁电性。因此，我们提出脉冲C-V测量作为评估MF（I）S电容器的新方法。
Ferroelectric properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated using the Pt/YMnO3/Y2O3/Si structure. The ferroelectric C–V hysteresis was observed for not only the Pt/YMnO3(0001)/Y2O3/Si capacitor but also the Pt/amorphousYMnO3/Y2O3/Si capacitor. The polarization evaluated by conventional C–V measurement should include interfacial polarization and rearrangement of the space charge together with the spontaneous polarization by ferroelectricity. To eliminate the generation of the interfacial polarization and the rearrangement of the space charge, the shorter charging time should be used to evaluate the ferroelectricity of the MFIS capacitor. Therefore, we propose the pulsed C–V measurement as a new method for evaluating the MF(I)S capacitor.