A lumped scalable model for silicon integrated spiral inductors

A lumped scalable model for silicon integrated spiral inductors
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硅集成螺旋电感器的集总可扩展模型

DOI:
10.1109/tcsi.2004.829301
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发表时间:
2004
期刊:
IEEE Transactions on Circuits and Systems I: Regular Papers
影响因子:
--
通讯作者:
G. Palmisano
G. Palmisano
中科院分区:
--
文献类型:
--
作者:
A. Scuderi;T. Biondi;E. Ragonese;G. Palmisano

文献摘要

被引文献

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提出了硅双极工艺中螺旋电感的集总可扩展模型。通过比较实验测量,首先研究了三种不同截面对电感器性能的影响。使用这一分析的结果和三维电磁仿真指南,几个圆形电感器集成在一个径向图案化的接地屏蔽模型验证的目的。该模型采用了一种新的串联电阻方程,只有一个拟合参数从实验测量中提取。所有其他模型元素都通过严格的分析方程与技术和几何数据相关联。该模型进行了验证,使用一个和两个端口测量的45个集成电感器的性能参数,并发现所有考虑的几何形状良好的协议,远高于自谐振的频率。
A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results of this analysis and three-dimensional electromagnetic simulation guidelines, several circular inductors were integrated on a radial patterned ground shield for model validation purposes. The model employs a novel equation for series resistance with only one fitting parameter extracted from experimental measurements. All other model elements were related to technological and geometrical data by using rigorous analytical equations. The model was validated using one- and two-port measured performance parameters of 45 integrated inductors, and excellent agreement was found for all considered geometries up to frequencies well above self-resonance.