The great improvement effect of pores on ZT in Co1−xNixSb3 system
The great improvement effect of pores on ZT in Co1−xNixSb3 system
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DOI：
10.1063/1.2963476
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发表时间：
2008-07
影响因子：
4
通讯作者：
Qinyu He;She-jun Hu;Xin-gui Tang;Y. Lan;Jian Yang;Xiaowei Wang;Z. Ren;Q. Hao;Gang Chen
中科院分区：
文献类型：
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作者：
Qinyu He;She-jun Hu;Xin-gui Tang;Y. Lan;Jian Yang;Xiaowei Wang;Z. Ren;Q. Hao;Gang Chen
本文采用直流感应热压和退火工艺制备了Co 1 − xNixSb 3 +y（x= 0.1，0.2; y=0，0.05）系统。通过在退火期间将压制的Co 1-xNixSb3.05颗粒退火成Co 1-xNixSb 3颗粒来制备孔。结果表明，从室温到500°C，直径大于1μm的孔显著提高了Co 1 − xNixSb 3体系的Seebeck系数，显著降低了热导率，几乎保持了电导率常数，从而显著提高了体系的无量纲优值（ZT）。通过对样品的比较，我们认为在方钴矿中引入气孔是一种有效的提高ZT的途径。
In this paper, the Co1−xNixSb3+y system (x=0.1,0.2; y=0, 0.05) has been prepared by direct current induced hot press and annealing. Pores were made by annealing pressed Co1−xNixSb3.05 pellets into Co1−xNixSb3 pellets during annealing. It was found that from room temperature to 500°C, the pores with diameter larger than 1μm has significantly increased the Seebeck coefficient, considerably decreased the thermal conductivity, almost maintained the electrical conductivity constant, and therefore markedly improved the dimensionless figure of merit (ZT) of Co1−xNixSb3 system. By comparing the samples, we conclude that inducing pores into skutterudites is an effective route to greatly improve the ZT.