Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers
Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers
复制标题
磁性黑砷磷单层中应变诱导自旋无带隙半导体和纯热自旋流
DOI：
10.1039/d2cp01108e
复制
发表时间：
2022-05-13
影响因子：
3.3
通讯作者：
Wu, Dandan
中科院分区：
文献类型：
--
作者：
Ji, Yutian;Tan, Xingyi;Wu, Dandan
无自旋能隙半导体（SGS）材料被认为是最有前途的候选人，理想的无质量和无耗散的状态，对低功率自旋电子器件的应用。在这里，我们提出了一种无自旋带隙的半导体黑色砷磷（AsP）单层卤化氯（Cl）吸附原子，并揭示了完美的自旋塞贝克效应诱导的SGS字符产生纯热自旋电流使用第一性原理计算。结果表明，在AsP单层膜中，Cl原子更倾向于吸附P原子而不是As原子，表现为铁磁半导体.吸附态AsP单层膜是一种理想的SGS材料，具有抛物线型的能量色散，即使在极低的开关温度下，也可以实现对称的自旋Seebeck电流，从而获得理想的纯热自旋电流。此外，面内应变工程可以有效地操纵吸附磷的AsP单层膜的电子结构，形成类似于吸附砷的AsP的理想抛物型SGS，并获得相应的热电效应。这些独特的功能表明，具有SGS特性的Cl-卤代AsP单分子膜在低功率自旋热电子器件中具有潜在的应用。
Spin-gapless semiconductor (SGS) materials are regarded as the most promising candidates for ideal massless and dissipationless states towards low-power spintronic device applications. Here, we propose a spin-gapless semiconducting black arsenic-phosphorus (AsP) monolayer halogenated by chlorine (Cl) adatoms and reveal the perfect spin Seebeck effect induced by its SGS character to produce pure thermal spin-current using first-principles calculations. Our results show that Cl atoms prefer to adsorb P atoms rather than As atoms in the AsP monolayer, behaving as a ferromagnetic semiconductor. The As-adsorbed AsP monolayer as an ideal SGS material with parabolic-type energy dispersion can be utilized to realize symmetrical spin Seebeck current for perfect pure thermal spin-current even at an extremely low on-off temperature. Moreover, in-plane strain engineering can effectively manipulate the electronic structures of the P-absorbed AsP monolayer for perfect parabolic-type SGS similar to As-adsorbed AsP, and to obtain the relevant thermoelectric effect. These distinct features suggest the potential applications of the Cl-halogenated AsP monolayer with the SGS character in low-power spin-caloritronic devices.