Coercivity change in an FePt thin layer in a Hall device by voltage application
Coercivity change in an FePt thin layer in a Hall device by voltage application
复制标题
DOI：
10.1063/1.3595318
复制
发表时间：
2011-05
影响因子：
4
通讯作者：
T. Seki;M. Kohda;J. Nitta;K. Takanashi
中科院分区：
文献类型：
--
作者：
T. Seki;M. Kohda;J. Nitta;K. Takanashi
通过MgO和Al-O绝缘层向霍尔器件施加电压（Vapp），可以调制垂直磁化FePt层的矫顽磁力（Hc）。通过将Vapp从-13变为13 V，观察到Hc中的1040 Oe的变化。根据对Hc的电压效应的定量分析，由电压施加引起的各向异性能的变化被评估为18.6 fJ/V m，这与理论预测相同。本文还讨论了MgO层对电压效应的作用。
The coercivity (Hc) of a perpendicularly magnetized FePt layer was modulated by applying the voltage (Vapp) to a Hall device through MgO and Al–O insulating layers. A change in ∼40 Oe in Hc was observed by changing Vapp from −13 to 13 V. From the quantitative analysis of the voltage effect on Hc, the change in the anisotropy energy by voltage application was evaluated to be 18.6 fJ/V m, which was of the same order as the theoretical prediction. The role of the MgO layer for the voltage effect was also discussed.