Formation of Through-Holes on Silicon Wafer by Optical Excitation Electropolishing Method
Formation of Through-Holes on Silicon Wafer by Optical Excitation Electropolishing Method
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光激励电解抛光法在硅片上形成通孔
DOI：
10.1143/jjap.39.378
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发表时间：
2000
影响因子：
1.5
通讯作者：
A. Satoh
中科院分区：
文献类型：
--
作者：
A. Satoh
以N型(100)取向硅片为阳极，铂板为阴极，在2.5wt%的HF电解液中进行选择性局部电抛光，形成通孔。得到的孔为边长5~35微米的正方形通孔，长径比为109。可以在特定区域形成密度为3,500孔/平方毫米的这种通孔。还证实了正方形倒金字塔结构的凹坑可以形成深毛细血管。这表明了形成柱子和管子等微结构的可能性。
Through-holes were formed by selective partial electropolishing in a 2.5 wt% HF electrolytic solution, using an N-type, (100)-oriented Si wafer as an anode, and a Pt plate as a cathode. The obtained holes were square through-holes of 5–35 µm side length, with an aspect ratio of 109. It was possible to form such through-holes with a density of 3,500 holes/mm2 in specified areas. It was also confirmed that the pit of the square-based inverted pyramid structure could form deep capillaries. This suggests the possibility of forming microstructures such as pillars and tubes.