Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact
Nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact
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低能电子碰撞产生的氮等离子体对氧化硅层进行氮化
DOI：
10.1063/1.119760
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发表时间：
1997
影响因子：
4
通讯作者：
Y. Todokoro
中科院分区：
文献类型：
--
作者：
H. Kobayashi;T. Mizokuro;Y. Nakato;K. Yoneda;Y. Todokoro
利用x射线光电子能谱（XPS）和同步辐射紫外光电子能谱研究了电子冲击产生的氮等离子体对氧化硅层的低温氮化作用，发现氧化硅层中可以掺入大量的氮。在25℃下氮化的氧化物表面的价带结构类似于Si3N4，而在700℃下氮化的氧化物表面的价带结构类似于氧化硅和氮化氧硅的混合物。XPS深度剖面测量结果表明，在靠近表面和氧化物/硅界面处氮浓度较高。
Low temperature nitridation of silicon oxide layers by nitrogen plasma generated by electron impact is investigated using x-ray photoelectron spectroscopy (XPS) and synchrotron radiation ultraviolet photoelectron spectroscopy and it is found that a large amount of nitrogen can be incorporated in the layers. The valence band structure of the oxide surface nitrided at 25 °C is similar to that of Si3N4, while that nitrided at 700 °C resembles the mixture of silicon oxide and silicon oxynitride. Measurements of XPS depth profiles show that the nitrogen concentration is high near the surface and the oxide/Si interface.