Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon
Reflectivity and PDE of VUV4 Hamamatsu SiPMs in liquid xenon
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DOI：
10.1088/1748-0221/15/01/p01019
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发表时间：
2019-10
影响因子：
1.3
通讯作者：
P. Nakarmi;I. Ostrovskiy;A. Soma;F. Retière;S. A. Kharusi;M. Alfaris;G. Anton;I. Arnquist;I. Badhrees;I. Badhrees;P. Barbeau;D. Beck;V. Belov;T. Bhatta;J. Blatchford;P. Breur;J. Brodsky;E. Brown;T. Brunner;T. Brunner;S. Mamahit;E. Caden;G. Cao;L. Cao;C. Chambers;B. Chana;S. Charlebois;M. Chiu;B. Cleveland;B. Cleveland;M. Coon;A. Craycraft;J. Dalmasson;T. Daniels;L. Darroch;A. D. S. Croix;A. D. S. Croix;A. D. Mesrobian-Kabakian;R. DeVoe;M. Vacri;J. Dilling;J. Dilling;Y. Ding;M. Dolinski;L. Doria;L. Doria;A. Dragone;J. Echevers;F. Edaltafar;M. Elbeltagi;L. Fabris;D. Fairbank;W. Fairbank;J. Farine;S. Ferrara;S. Feyzbakhsh;R. Fontaine;A. Fucarino;G. Gallina;G. Gallina;P. Gautam;G. Giacomini;D. Goeldi;R. Gornea;R. Gornea;G. Gratta;E. Hansen;M. Heffner;E. Hoppe;J. Hössl;A. House;M. Hughes;A. Iverson;A. Jamil;M. Jewell;X. Jiang;A. Karelin;L. Kaufman;T. Koffas;R. Krücken;R. Krücken;A. Kuchenkov;K. S. Kumar;Y. Lan;Y. Lan;A. Larson;K. Leach;B. Lenardo;D. S. Leonard;G. Li;S. Li;Z. Li;C. Licciardi;P. Lv;R. Maclellan;N. Massacret;T. McElroy;M. Medina-Peregrina;T. Michel;B. Mong;D. Moore;K. Murray;C. Natzke;R. J. Newby;Z. Ning;O. Njoya;F. Nolet;O. Nusair;K. Odgers;A. Odian;M. Oriunno;J. Orrell;G. S. Ortega;C. Overman;S. Parent;A. Piepke;A. Pocar;J. Pratte;V. Radeka;E. Raguzin;S. Rescia;M. Richman;A. Robinson;T. Rossignol;P. Rowson;N. Roy;J. Runge;R. Saldanha;S. Sangiorgio;K. S. Viii;G. St-Hilaire;V. Stekhanov;T. Stiegler;X. Sun;M. Tarka;J. Todd;T. Totev;R. Tsang;T. Tsang;F. Vachon;V. Veeraraghavan;S. Viel;G. Visser;C. Vivo-Vilches;J. Vuilleumier;M. Wagenpfeil;T. Wager;M. Walent;Q. Wang;Martin Ward;Martin Ward;J. Watkins;M. Weber;W. Wei;L. Wen;U. Wichoski;S. X. Wu;W. Wu;Xiongwei Wu;Q. Xia;H. Yang;Liang Yang;O. Zeldovich;J. Zhao;Y. Zhou;T. Ziegler
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文献类型：
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作者：
P. Nakarmi;I. Ostrovskiy;A. Soma;F. Retière;S. A. Kharusi;M. Alfaris;G. Anton;I. Arnquist;I. Badhrees;I. Badhrees;P. Barbeau;D. Beck;V. Belov;T. Bhatta;J. Blatchford;P. Breur;J. Brodsky;E. Brown;T. Brunner;T. Brunner;S. Mamahit;E. Caden;G. Cao;L. Cao;C. Chambers;B. Chana;S. Charlebois;M. Chiu;B. Cleveland;B. Cleveland;M. Coon;A. Craycraft;J. Dalmasson;T. Daniels;L. Darroch;A. D. S. Croix;A. D. S. Croix;A. D. Mesrobian-Kabakian;R. DeVoe;M. Vacri;J. Dilling;J. Dilling;Y. Ding;M. Dolinski;L. Doria;L. Doria;A. Dragone;J. Echevers;F. Edaltafar;M. Elbeltagi;L. Fabris;D. Fairbank;W. Fairbank;J. Farine;S. Ferrara;S. Feyzbakhsh;R. Fontaine;A. Fucarino;G. Gallina;G. Gallina;P. Gautam;G. Giacomini;D. Goeldi;R. Gornea;R. Gornea;G. Gratta;E. Hansen;M. Heffner;E. Hoppe;J. Hössl;A. House;M. Hughes;A. Iverson;A. Jamil;M. Jewell;X. Jiang;A. Karelin;L. Kaufman;T. Koffas;R. Krücken;R. Krücken;A. Kuchenkov;K. S. Kumar;Y. Lan;Y. Lan;A. Larson;K. Leach;B. Lenardo;D. S. Leonard;G. Li;S. Li;Z. Li;C. Licciardi;P. Lv;R. Maclellan;N. Massacret;T. McElroy;M. Medina-Peregrina;T. Michel;B. Mong;D. Moore;K. Murray;C. Natzke;R. J. Newby;Z. Ning;O. Njoya;F. Nolet;O. Nusair;K. Odgers;A. Odian;M. Oriunno;J. Orrell;G. S. Ortega;C. Overman;S. Parent;A. Piepke;A. Pocar;J. Pratte;V. Radeka;E. Raguzin;S. Rescia;M. Richman;A. Robinson;T. Rossignol;P. Rowson;N. Roy;J. Runge;R. Saldanha;S. Sangiorgio;K. S. Viii;G. St-Hilaire;V. Stekhanov;T. Stiegler;X. Sun;M. Tarka;J. Todd;T. Totev;R. Tsang;T. Tsang;F. Vachon;V. Veeraraghavan;S. Viel;G. Visser;C. Vivo-Vilches;J. Vuilleumier;M. Wagenpfeil;T. Wager;M. Walent;Q. Wang;Martin Ward;Martin Ward;J. Watkins;M. Weber;W. Wei;L. Wen;U. Wichoski;S. X. Wu;W. Wu;Xiongwei Wu;Q. Xia;H. Yang;Liang Yang;O. Zeldovich;J. Zhao;Y. Zhou;T. Ziegler
了解材料的反射特性和光电探测器的光电探测效率（PDE）对于优化下一代无中微子双β衰变，直接探测暗物质和中微子振荡实验的能量分辨率和灵敏度非常重要，这些实验将使用惰性液体气体，如nEXO，达尔文，DarkSide-20 k和DUNE。目前关于液态惰性气体中的反射率和偏微分方程的信息很少，因为这种测量很难在低温环境中和足够短的波长下进行。本文报道了用氙闪烁光（~ 175 nm）在液体氙中对滨松VUV 4硅光电倍增管（SiPM）的镜面反射率和相对偏微分方程（PDE）的测量结果。三种VUV 4 SiPM样品在15 μ m入射下的镜面反射率分别为30.4± 1.4%、28.6± 1.3%和28.0± 1.3%。三种器械在法向入射时的PDE相差±8%（标准差）。的反射率和偏微分方程的角度依赖性也被测量的SiPM之一。反射率和偏微分方程都随入射角的增大而减小。这是第一次测量偏微分方程的角度依赖性和反射率的SiPM在液体氙。
Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μm micro-cells conducted with xenon scintillation light (∼175 nm) in liquid xenon. The specular reflectivity at 15̂ incidence of three samples of VUV4 SiPMs is found to be 30.4±1.4%, 28.6±1.3%, and 28.0±1.3%, respectively. The PDE at normal incidence differs by ±8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.