Effects of the loading and polymerization temperature on the capacitive performance of polyaniline in NaNO3

Effects of the loading and polymerization temperature on the capacitive performance of polyaniline in NaNO3
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DOI:
10.1016/s0013-4686(02)00411-5
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发表时间:
2002-09-25
影响因子:
6.6
通讯作者:
Lin, JY
Lin, JY
中科院分区:
材料科学2区
文献类型:
--
作者:
Hu, CC;Lin, JY

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用恒电位法在1M HNO3中4℃恒温下合成的聚苯胺(PANI)具有理想的电容特性(即高可逆性和高功率性能),其比电容高达210Fg(-1),适用于NaNO3中的电化学超级电容器。用循环伏安法和充放电技术比较了聚合电荷密度(即聚合物负载量)和聚合温度对聚苯胺薄膜电容特性的影响,并与X射线光电子能谱(XPS)测试结果进行了比较。在4℃下聚合的聚苯胺薄膜具有最高的比电容,这归因于其最低的结构缺陷密度。用扫描电子显微镜(SEM)观察了PANI薄膜的表面形貌。(C)2002爱思唯尔科学有限公司。保留所有权利。
Polyaniline (PANI) synthesized by a potentiostatic method at 4 degreesC in 1 M HNO3 with the polymerization charge density equal to/less than 0.45 C cm(-2) was demonstrated to exhibit ideally capacitive characteristics (i.e. high reversibility and high-power property) with a high specific capacitance of 210 F g(-1) for the application of electrochemical supercapacitors in NaNO3. Influences of the polymerization charge density (i.e. the polymer loading) and the polymerization temperature on the capacitive characteristics of PANI films compared by both cyclic voltammetry and charge-discharge technique were reasonably correlated with their structural properties examined by X-ray photoelectron spectroscopy (XPS). The highest specific capacitance of a PANI film polymerized at 4 degreesC was attributed to its lowest density of structure defects. The surface morphology of these PANI films was examined by a scanning electron microscope (SEM). (C) 2002 Elsevier Science Ltd. All rights reserved.