Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
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DOI：
10.1063/1.1737061
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发表时间：
2004-05-03
影响因子：
4
通讯作者：
Kawanishi, H
中科院分区：
文献类型：
--
作者：
Takano, T;Narita, Y;Kawanishi, H
在脉冲光泵浦下，获得了Al组分x = 0.66的AlxGa 1-xN多量子阱激光器在241.5nm处的室温深紫外激光输出。室温下阈值泵浦功率约为1200 kW/cm（2）。在20 K时，最短激射波长为231.8nm。该激光器结构生长在高质量的AlN层上，该AlN层通过在衬底和AlN层之间插入AlN/GaN多缓冲层结构而生长在4 H-SiC衬底上。在20 ~ 150 K和160 K ~室温范围内，激光波长的温度依赖性分别为0.01和0.03 nm/K。激光腔由AlGaN外延层的解理面和SiC衬底制成。为此，必须将晶片抛光到小于100 μ m的厚度。在我们的实验中，用于分裂的最佳晶片厚度为60-70 μ m。(C)2004年，美国物理学会。
Room-temperature deep-ultraviolet lasing of AlxGa1-xN multiple-quantum-well lasers with an Al composition x of 0.66 was achieved at 241.5 nm under pulsed optical pumping. The threshold pumping power was approximately 1200 kW/cm(2) at room temperature. The shortest lasing wavelength was 231.8 nm at 20 K. The laser structure was grown on a high-quality AlN layer, which was grown on a 4H-SiC substrate by inserting an AlN/GaN multibuffer-layer structure between the substrate and the AlN layer. Temperature dependence of lasing wavelength was also estimated to be 0.01 and 0.03 nm/K in the temperature region from 20 to 150 K and from 160 K to room temperature, respectively. The laser cavity was made of a cleaved facet of AlGaN epitaxial layers and a SiC substrate. For this purpose, it was necessary to polish the wafer to a thickness of less than 100 mum. The optimal wafer thickness for cleaving in our experiments was 60-70 mum. (C) 2004 American Institute of Physics.