Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
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DOI：
10.1021/nl401981u
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发表时间：
2013-08
期刊：
影响因子：
10.8
通讯作者：
Yunyan Zhang;M. Aagesen;J. Holm;H. I. Jorgensen;Jiang Wu;Huiyun Liu
中科院分区：
文献类型：
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作者：
Yunyan Zhang;M. Aagesen;J. Holm;H. I. Jorgensen;Jiang Wu;Huiyun Liu
利用固体源分子束外延技术在硅（111）衬底上实现了自催化GaAsP纳米线的生长。通过优化V/III和P/As通量比，以及Ga通量，高晶体质量的GaAsP纳米线已被证明具有几乎纯的锌-铟相。将GaAsP纳米线的生长与常规GaAs纳米线的生长进行比较，表明P的掺入对催化剂成核能具有显著影响，从而对纳米线的形貌和晶体质量具有显著影响。此外，还比较了气-液-固纳米线生长与气-固薄膜生长的P/As掺入比，并从生长动力学角度解释了这两种生长方式的差异。在室温下，在核芯GaAsP纳米线上的径向GaAsP壳层的气-固外延生长得到了710 nm的发光。这些结果提供了有价值的新信息到NW成核机制，并开辟了新的前景，集成III-V族纳米线photoproteics和可见光发射器上的硅平台，通过使用自催化的GaAsP核壳纳米线。
We realize the growth of self-catalyzed GaAsP nanowires (NWs) on silicon (111) substrates using solid-source molecular beam epitaxy. By optimizing the V/III and P/As flux ratios, as well as the Ga flux, high-crystal-quality GaAsP NWs have been demonstrated with almost pure zinc-blende phase. Comparing the growth of GaAsP NWs with that of the conventional GaAs NWs indicates that the incorporation of P has significant effects on catalyst nucleation energy, and hence the nanowire morphology and crystal quality. In addition, the incorporation ratio of P/As between vapor-liquid-solid NW growth and the vapor-solid thin film growth has been compared, and the difference between these two growth modes is explained through growth kinetics. The vapor-solid epitaxial growth of radial GaAsP shell on core GaAsP NWs is further demonstrated with room-temperature emission at ~710 nm. These results give valuable new information into the NW nucleation mechanisms and open up new perspectives for integrating III-V nanowire photovoltaics and visible light emitters on a silicon platform by using self-catalyzed GaAsP core-shell nanowires.