Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures
复制标题
DOI：
10.1007/978-94-009-0657-0_20
复制
发表时间：
1983-02
影响因子：
8.6
通讯作者：
R. T. Tung;J. Gibson;J. Poate
中科院分区：
文献类型：
--
作者：
R. T. Tung;J. Gibson;J. Poate
Continuous and planar single-crystal NiSi2films (<60 Å thick) have been grown on Si(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (<20 Å) on atomically clean Si at room temperature, followed by low-temperature heating at ~450°C, results in the growth of epitaxial NiSi2 films whose structure depends critically on the starting Ni thickness. The films are coherent, without misfit dislocations. The orientation of the (111) silicide can be controlled by the initial Ni thickness.
