Design and Experimental Verification of a High-Voltage Series-Stacked GaN eHEMT Module for Electric Vehicle Applications
Design and Experimental Verification of a High-Voltage Series-Stacked GaN eHEMT Module for Electric Vehicle Applications
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DOI：
10.1109/tte.2018.2888476
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发表时间：
2019-03
影响因子：
7
通讯作者：
Mehdi Shojaie;N. Elsayad;H. Moradisizkoohi;O. Mohammed
中科院分区：
文献类型：
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作者：
Mehdi Shojaie;N. Elsayad;H. Moradisizkoohi;O. Mohammed
提出了一种适用于电动汽车电源调节系统的扩展额定电压氮化镓功率开关模块。氮化镓高电子迁移率晶体管（hemt）的击穿电压有限，阻碍了其在高压应用中的应用。GaN模块由两个串联堆叠的增强模hemt组成，目的是复制击穿电压。堆叠的ehemt采用集成SSD驱动。SSD为模块中的两个hemt提供足够的栅极电荷，并保证在切换转换和稳态期间器件之间的平衡电压共享。详细介绍了该模块的工作原理，并推导了考虑寄生电感的解析模型。通过仿真分析，研究了固态硬盘在各种工况下的性能。研究了固态硬盘参数的变化对栅源电压振荡的影响。最后，开发了具有两个1.3 kv GaN eHEMT模块的双向升压变换器的实验装置，并在各种场景下进行了测试。此外，还对1.3 kv GaN模块和1.2 kv SiC MOSFET进行了损耗比较。仿真和实验结果表明，所开发的GaN eHEMT模块具有令人满意的动态和静态性能，在所有场景下，稳态期间的电压失配小于10%。此外，与SiC MOSFET相比，GaN模块的功率损耗（适用于不同的开关频率）降低了35%-55%。
A gallium nitride (GaN) power switching module with extended rated voltage is proposed for electric vehicle power conditioning system. Limited breakdown voltage of GaN high-electron-mobility transistors (HEMTs) hinders their usage in high-voltage applications. The presented GaN module is composed of two series-stacked enhancement-mode HEMTs for the purpose of duplicating the breakdown voltage. An integrated series-switch driver (SSD) is used to drive the stacked eHEMTs. The SSD provides adequate gate charge for both HEMTs in the module, and guarantees balanced voltage sharing between the devices during the switching transitions and steady state. The operation principle of the module is described thoroughly, and an analytical model has been derived considering parasitic inductances. Simulation analysis is carried out to study the performance of the SSD in various conditions. Also, the effect of variation in the SSD parameters on the gate–source voltage oscillation is investigated. Finally, an experimental setup of a bidirectional boost converter with two 1.3-kV GaN eHEMT modules is developed and tested under various scenarios. Moreover, a loss comparison between the proposed 1.3-kV GaN module and a 1.2-kV SiC MOSFET is carried out. The simulation and experimental results show that the developed GaN eHEMT module has satisfying dynamic and static performance with less than 10% voltage mismatch during the steady-state period for all scenarios. Also, the GaN module proved to have 35%–55% lower power loss (for different switching frequencies) compared to the SiC MOSFET counterpart.