Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications
Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications
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适用于 5G 应用的毫米波段 CMOS 射频相控阵收发器 IC 设计
DOI：
10.1109/iedm13553.2020.9371948
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
S.
中科院分区：
文献类型：
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作者：
H. Park;D. Kang;J. Lee;D. Minn;Y. Aoki;K. Kim;S. Lee;D. Lee;S. Kim;J. Kim;W. Lee;C. Kim;S. Park;J. Park;B. Suh;J. Jang;M. Kim;K. Min;S. Jeon;A.;Y. Kim;J. Lee;J. Son;S.
本文介绍了毫米波（MMW）频段第五代（5G）相控阵收发器ic的设计挑战和解决方案。采用28nm体CMOS器件技术，将多个射频相控阵元件集成在单芯片中，以实现高水平的TX EIRP和RX灵敏度。采用增益、POUT、稳定性、可靠性和线性度增强技术等多种设计方法，使CMOS成为毫米波频段5G应用的关键器件解决方案。设计了一款39GHz频段16通道CMOS RF相控阵收发器IC，可支持4T/4R MIMO基站应用，包括×64 RF相控阵IC（共1,024个相控阵元件）。T/RX路径具有bbb30 / 40db的增益动态范围，具有灵活性和可扩展性。TX路径显示POUT/Ch。在EVM为-34dB （800MHz）和PDC/Ch时，>6.0dBm。105兆瓦。RX路径的NF为4.2dB， EVM为-38dB (100MHz), PDC/Ch。39兆瓦。这些最先进的结果导致5G NR基站系统的TX EIRP为>55dBm， RX灵敏度<-113dBm/100MHz。
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1,024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.