Effects of SRO Buffer Layer on Multiferroic BiFeO3 Thin Films
Effects of SRO Buffer Layer on Multiferroic BiFeO3 Thin Films
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DOI：
10.1111/j.1551-2916.2008.02536.x
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发表时间：
2008-10
影响因子：
3.9
通讯作者：
R. Zheng;C. H. Sim;Junzhong Wang;S. Ramakrishna
中科院分区：
文献类型：
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作者：
R. Zheng;C. H. Sim;Junzhong Wang;S. Ramakrishna
晶粒尺寸优化的 SrRuO3 (SRO) 缓冲层改善了 BiFeO3 薄膜的结晶、表面形貌和电学行为。大晶粒SRO缓冲层促进致密多铁性BiFeO3 (BFO)薄膜的生长并减少结构缺陷。 X射线衍射的相鉴定和扫描电子显微镜的表面形貌研究表明，溅射较厚的SRO薄膜形成的大晶粒SRO缓冲层促进了钙钛矿相的形成以及结晶度。这些 BFO 薄膜还表现出漏电流降低，这表明与沉积在较小颗粒 SRO 缓冲层上的 BFO 薄膜相比，铁电磁滞回线的频率依赖性较弱。对介电性能和疲劳耐久性的研究表明，采用较大晶粒的 SRO 缓冲层也减少了 BFO 薄膜的结构缺陷。
Crystallization, surface morphology, and electrical behavior of BiFeO3 thin films are improved by SrRuO3 (SRO) buffer layer with optimized grain size. Large-grained SRO buffer layer promotes the growth of dense multiferroic BiFeO3 (BFO) thin films and reduces structural defects. Phase identification by using X-ray diffraction and surface morphology studies by using scanning electron microscopy show that the large-grained SRO buffer layer formed by sputtering thicker SRO films promotes the formation of the perovskite phase as well as the crystallinity. These BFO films have also shown reduced leakage current, as suggested by the weaker frequency dependence of the ferroelectric hysteresis loops as compared with the BFO films deposited on smaller-grained SRO buffer layer. Investigation into the dielectric properties and fatigue endurance reveals that the structural defects of the BFO thin film have also been reduced by employing the larger-grained SRO buffer layer.