19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor

19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor
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DOI:
10.1002/pip.822
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发表时间:
2008-05-01
影响因子:
6.7
通讯作者:
Noufi, Rommel
Noufi, Rommel
中科院分区:
材料科学2区
文献类型:
--
作者:
Repins, Ingrid;Contreras, Miguel A.;Noufi, Rommel

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我们报告了一个新的纪录,总面积效率为19.9%的CuInGaSe2为基础的薄膜太阳能电池。更高的填充因子提高了性能。该装置是由三个阶段的共蒸发与改性的表面终止。生长条件,器件分析,和基本的薄膜表征。出版社:John Wiley & Sons,Ltd.
We report a new record total-area efficiency of 19.9% for CuInGaSe2-based thin-film solar cells. Improved performance is due to higher fill factor. The device was made by three-stage co-evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.