Self-amplified photo-induced gap quenching in a correlated electron material.

Self-amplified photo-induced gap quenching in a correlated electron material.
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DOI:
10.1038/ncomms12902
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发表时间:
2016-10-04
影响因子:
16.6
通讯作者:
Aeschlimann, M.
Aeschlimann, M.
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Mathias, S.;Eich, S.;Urbancic, J.;Michael, S.;Carr, A. V.;Emmerich, S.;Stange, A.;Popmintchev, T.;Rohwer, T.;Wiesenmayer, M.;Ruffing, A.;Jakobs, S.;Hellmann, S.;Matyba, P.;Chen, C.;Kipp, L.;Bauer, M.;Kapteyn, H. C.;Schneider, H. C.;Rossnagel, K.;Murnane, M. M.;Aeschlimann, M.

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Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe2, our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation. The non-equilibrium dynamics of correlated electron materials are still poorly understood. Here, the authors use time- and angle-resolved photoemission spectroscopy to show that carrier multiplication is important in initial non-equilibrium dynamics of 1T-TiSe2 and depends on the size of the energy gap.
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