40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
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DOI：
10.1109/16.848298
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发表时间：
2000-07
影响因子：
3.1
通讯作者：
R. Windisch;B. Dutta;M. Kuijk;A. Knobloch;S. Meinlschmidt;S. Schoberth;P. Kiesel;G. Borghs;G. Dohler;P. Heremans
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文献类型：
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作者：
R. Windisch;B. Dutta;M. Kuijk;A. Knobloch;S. Meinlschmidt;S. Schoberth;P. Kiesel;G. Borghs;G. Dohler;P. Heremans
在传统的发光二极管（LED）中，外部效率受到发光二极管-空气界面处的全内反射的限制。这个问题可以通过非谐振腔LED的概念来克服，该非谐振腔LED是具有纹理化顶表面和后反射器的LED。表面纹理使用自然光刻。单层随机放置的聚苯乙烯球作为干蚀刻的掩模。我们提出的细节GaAs/AlGaAs LED的织构工艺参数的优化。所研究的参数是球体的尺寸、球体在表面上的分布和蚀刻深度。使用优化的纹理条件，我们实现了未封装的顶部发射氧化物限制的GaAs/AlGaAs非谐振腔LED，外部量子效率为40%。
In conventional light-emitting diodes (LEDs), the external efficiency is limited by total internal reflection at the semiconductor-air interface. The problem can be overcome by the concept of the nonresonant cavity LED, which is an LED with a textured top surface and a rear reflector. The surface is textured using natural lithography. A monolayer of randomly positioned polystyrene spheres acts as a mask for dry etching. We present details about the optimization of the parameters of the texturing process for GaAs/AlGaAs LEDs. The studied parameters are the size of the spheres, the distribution of the spheres on the surface and the etching depth. Using optimized texturing conditions, we have realized un-encapsulated top-emitting oxide-confined GaAs/AlGaAs nonresonant cavity LEDs with an external quantum efficiency of 40%.