Crystal structure and electrical resistivity of the ScMnxAl12−x (4.0≤x≤4.6) compound
Crystal structure and electrical resistivity of the ScMnxAl12−x (4.0≤x≤4.6) compound
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ScMnxAl12−x (4.0≤x≤4.6)化合物的晶体结构和电阻率
DOI：
10.1016/j.jallcom.2003.08.039
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发表时间：
2004
影响因子：
6.2
通讯作者：
A. Palasyuk
中科院分区：
文献类型：
--
作者：
B. Kotur;O. Myakush;A. Palasyuk
合成了一个新的三元化合物ScMnxAl12−x(4.0≤x≤4.6)，并对其晶体结构进行了研究。它属于ThMn12结构类型，空间群为I4/mm。晶格参数在x=4.0时的a=0.87734(3)，c=0.50629(2)nm到x=4.6时的a=0.87429(2)，c=0.50467(2)nm范围内呈非线性变化。在4.2-300K温度范围内，研究了ScMn4.2Al7.8和ScMn4.6Al7.4合金的电阻率随温度的变化规律。根据ρ(T)的行为，根据1/ρ=σ(T)=σ0exp(−A/T1/4)，在显著的温度范围(4.2-50K)内推导出以可变范围跳跃表示的跳跃电导率。跃迁电导区的宽度与晶体结构中的原子无序有关。目前和以前的数据表明，RMnxAl12−中的Mn是观察到的异常输运的主要原因。
A new ternary ScMnxAl12−x(4.0≤x≤4.6) compound has been synthesized and its crystal structure has been investigated. It belongs to the ThMn12structure type, space group I4/mmm. The lattice parameters vary non-linearly within its homogeneity region from a=0.87734(3), c=0.50629(2)nm for x=4.0 to a=0.87429(2), c=0.50467(2)nm for x=4.6. The temperature dependence of the resistivity of ScMn4.2Al7.8and ScMn4.6Al7.4alloys have been studied within the temperature range of 4.2–300K. Hopping conductivity in terms of variable range hopping is deduced over a significant temperature range (4.2–50K) from the behavior of ρ(T) according to 1/ρ=σ(T)=σ0exp (−A/T1/4). The width of the hopping conductivity regime is associated with the atomic disorder in the crystal structure. The present and earlier data indicate that Mn in the RMnxAl12−xternaries is primarily responsible for the unusual transport observed.