New Tunnel FET Charge-Trapping Memory with Large Memory Window for Ultra Low Power Operation
New Tunnel FET Charge-Trapping Memory with Large Memory Window for Ultra Low Power Operation
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新型隧道 FET 电荷捕获存储器，具有大内存窗口，可实现超低功耗运行
DOI：
10.7567/ssdm.2017.ps-4-10
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
H. Kino
中科院分区：
文献类型：
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作者：
H. Kino
电荷俘获存储器为实现低功耗运行需要更大的存储窗口。隧穿场效应晶体管（Tunnel FET）结构因其不对称结构是实现大存储窗口的有前景的结构之一。在具有N⁺栅极的隧穿场效应晶体管的情况下，与传统场效应晶体管结构相比，P⁺源极和N⁺栅极边缘之间存在更高的电场。这种高电场能够使大量电荷注入到电荷存储层。在本研究中，我们制造了一种具有隧穿场效应晶体管的SONOS存储器，并评估了写入操作特性。
Charge-trapping memory needs a larger memory window for low power operation. Tunnel FET structure is one of the promising structure to achieve the large memory window due to its asymmetric structure. In the case of tunnel FET with N+ gate, there is higher electric field between P+ source and N+ gate edge compared with conventional FET structure. This high electric field enables a large amount of charge injection into the charge storage layer. In this study, we fabricated a SONOS memory with tunnel FET and evaluated write-operation characteristics.