Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors
Temperature- and density-dependent channel potentials in high-mobility organic field-effect transistors
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DOI：
10.1103/physrevb.80.115325
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发表时间：
2009-09
影响因子：
3.7
通讯作者：
M. Kemerink;T. Hallam;Mi Jung Lee;Ni Zhao;M. Caironi;H. Sirringhaus
中科院分区：
文献类型：
--
作者：
M. Kemerink;T. Hallam;Mi Jung Lee;Ni Zhao;M. Caironi;H. Sirringhaus
The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristic ...
