Characterization of a superconducting microstrip single-photon detector shunted with an external resistor
Characterization of a superconducting microstrip single-photon detector shunted with an external resistor
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DOI：
10.1088/1361-6668/acce74
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发表时间：
2023-04
影响因子：
3.6
通讯作者：
Yu-Ze Wang;Weijun Zhang;Guangzhao Xu;J. Xiong;D-H Fan;Zhigang Chen;Xingyu Zhang;Zhen Wang-Zhen-Wan
中科院分区：
文献类型：
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作者：
Yu-Ze Wang;Weijun Zhang;Guangzhao Xu;J. Xiong;D-H Fan;Zhigang Chen;Xingyu Zhang;Zhen Wang-Zhen-Wan
超导微带单光子探测器（SMSPD）由于载流能力大，动电感小，通常需要一个分流电阻来避免锁存。本文研究了并联电阻对微桥式smspd性能的影响。通过两种方法分析了在不同并联电阻下等效开关电流的变化，并利用本征暗计数率曲线确定了工作电流范围。我们观察到，减小分流电阻可以增加工作电流范围，从而有助于提高内部检测效率（IDE）和降低iDCR。然而，减小分流电阻会降低脉冲幅度，增加脉冲衰减时间，从而降低SMSPD的时序抖动和计数率性能。利用带分流电阻的SMSPD电路模型可以定性地再现实验结果的趋势，为分流电阻的选择提供了有用的信息。此外，我们报告了氦离子辐照SMSPD的检测性能提高，其分流电阻为5.2 Ω。我们观察到一个弱的IDE饱和与偏置电流在波长高达2000 nm，检测电流和光子能量之间的非线性关系。
A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 Ω. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.