Superconductor-to-Semiconductor Interface Circuit for High Data Rates
Superconductor-to-Semiconductor Interface Circuit for High Data Rates
复制标题
用于高数据速率的超导至半导体接口电路
DOI：
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发表时间：
2009
影响因子：
1.8
通讯作者：
F. H. Uhlmann
中科院分区：
文献类型：
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作者：
T. Ortlepp;S. Wuensch;M. Schubert;P. Febvre;B. Ebert;J. Kunert;E. Crocoll;H. Meyer;M. Siegel;F. H. Uhlmann
提出了一种新型的工作在液氦温度下的快速单磁通量子（RSFQ）输出驱动器和赝晶高电子迁移率晶体管（p-HEMT）放大器。包括RSFQ输出驱动器和半导体放大器的第一晶体管级之间的芯片间连接的无源互连是用于信号匹配的关键元件，并且被优化以最小化对RSFQ电路的反射。RSFQ输出驱动器基于单通量量子至直流转换器和倍压器。该电路采用FLUXONICS Foundry的铌基1 kA/cm 2工艺实现，并提供高达438 μ V的输出电压。我们展示了高速实验的输出驱动器结合两个不同的半导体放大器电路在液氦温度。2-Gb/s数据流的输出电压被测量为约3.5mV。
We present a new kind of rapid-single-flux-quantum (RSFQ) output driver together with a pseudomorphic high electron mobility transistor (p-HEMT) amplifier both operating at liquid helium temperature. The passive interconnect including the interchip connection between the RSFQ output driver and the first transistor stage of the semiconductor amplifier is the key element for signal matching and was optimized for minimizing the reflections to the RSFQ circuit. The RSFQ output driver is based on a single-flux-quantum to dc converter and a voltage doubler. The circuit is realized in the Niobium based 1 kA/cm2 process of FLUXONICS Foundry and provides up to 438-muV output voltage. We demonstrate high-speed experiments of the output driver in combination with two different semiconductor amplifier circuits at liquid helium temperature. The output voltage of a 2-Gb/s data stream was measured to be about 3.5 mV.