High‐voltage 6H‐SiC p‐n junction diodes
High‐voltage 6H‐SiC p‐n junction diodes
复制标题
高压6H-SiC p-n结二极管
DOI：
10.1063/1.106195
复制
发表时间：
1991
影响因子：
4
通讯作者：
C. Salupo
中科院分区：
文献类型：
--
作者：
L. Matus;J. Powell;C. Salupo
化学气相沉积（CVD）工艺已被用于在商业生产的单晶6H - SiC晶圆上生产n型和p型6H - SiC外延层的器件结构。利用反应离子蚀刻、氧化物钝化和电接触金属化技术，成功地从这些器件结构中制备了台面型p - n结二极管。当在空气中测试时，6H‐SiC二极管在最高测试温度600°C下显示出优异的整流特性。为了观察p - n结二极管的雪崩击穿，必须在高电强度液体下进行测试。雪崩击穿电压为1000 V，这是CVD生长的SiC二极管所报道的最高反向击穿电压。
A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n junction diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.