Photon-stimulated H+ desorption from Si-based materials initiated by deep-core-level excitation
Photon-stimulated H+ desorption from Si-based materials initiated by deep-core-level excitation
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DOI：
10.1103/physrevb.57.4883
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发表时间：
1998-02-15
影响因子：
3.7
通讯作者：
Watanabe, Y
中科院分区：
文献类型：
--
作者：
Akazawa, H;Sugiyama, M;Watanabe, Y
在Si 1 s激发阈值附近研究了H+离子从HF处理的Si（100）和热生长的SiO_2上的光激脱附（PSD）。H+信号的飞行时间谱表现出由来自不同原始物种的α和β峰组成的双峰结构。的PSD的α-H+出现在较长的飞行时间是在共振与激发的是核心电子的导带最小值，这表明，从深芯水平的单个电子的激发是足以诱导解吸，然后通过创建多个孔的俄歇衰变级联。据推测，α-H+和β-H+的起源是由不同数量的本地化的孔或不同的喷射角取决于硅氢化物物种的歧视。而SiO_2的H ~+ PSD则与1 s-->pi ~* 跃迁有明显的共振，反映了导电电子和价空穴的局域化特征。[S0163-1829（98）07508-0]。
Photon-stimulated desorption (PSD) of H+ ions from HF-treated Si(100) and thermally grown SiO2 has been investigated near the Si 1s excitation threshold. The time-of-flight spectrum of the H+ signal exhibits a bimodal structure consisting of alpha and beta peaks resulting from different original species. The PSD of alpha-H+ appearing at longer flight times is in resonance with the excitation of a Is core electron to the conduction-band minimum, indicating that excitation of a single electron from a deep-core level is sufficient to induce desorption followed by the creation of multiple holes by Auger decay cascades. It is inferred that the origins of alpha-H+ and beta-H+ are discriminated by different numbers of localized holes or different ejection angles depending on the silicon hydride species. The H+ PSD from SiO2, in contrast, shows sharp resonance with the 1s-->pi* transition, thus reflecting the localized character of conduction electrons and valence holes. [S0163-1829(98)07508-0].