Epitaxial Synthesis of Highly Oriented 2D Janus Rashba Semiconductor BiTeCl and BiTeBr Layers
Epitaxial Synthesis of Highly Oriented 2D Janus Rashba Semiconductor BiTeCl and BiTeBr Layers
复制标题
DOI：
10.1021/acsnano.0c06434
复制
发表时间：
2020-11-24
期刊：
影响因子：
17.1
通讯作者：
Tongay, Sefaattin
中科院分区：
文献类型：
--
作者：
Hajra, Debarati;Sailus, Renee;Tongay, Sefaattin
层状BiTeX （X = Cl, Br， I）化合物家族是具有巨大rashba分裂和许多奇异表面和体物理性质的本征双面半导体。迄今为止，对这些材料的研究需要从大块晶体上进行机械剥离，从而产生不可伸缩尺寸的厚片。在这里，我们报告了通过纳米转换技术外延合成Janus BiTeCl和BiTeBr片，可以产生很少的三层Rashba半导体(
The family of layered BiTeX (X = Cl, Br, I) compounds are intrinsic Janus semiconductors with giant Rashba-splitting and many exotic surface and bulk physical properties. To date, studies on these materials required mechanical exfoliation from bulk crystals which yielded thick sheets in nonscalable sizes. Here, we report epitaxial synthesis of Janus BiTeCl and BiTeBr sheets through a nanoconversion technique that can produce few triple layers of Rashba semiconductors (