Switching of a ferroelectric polymer Langmuir–Blodgett film studied by electrostatic force microscopy
Switching of a ferroelectric polymer Langmuir–Blodgett film studied by electrostatic force microscopy
复制标题
通过静电力显微镜研究铁电聚合物 Langmuir-Blodgett 薄膜的切换
DOI：
10.1063/1.1346650
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发表时间：
2001
影响因子：
3.2
通讯作者：
S. Yudin
中科院分区：
文献类型：
--
作者：
L. Blinov;R. Barberi;S. Palto;M. P. Santo;S. Yudin
用静电力显微镜（EFM）研究了超薄铁电LB膜。薄膜沉积的铁电聚合物的单层从水表面到覆盖有Al电极的Si衬底上的后续转移。通过在尖端和Al电极之间施加电压来局部切换膜。通过EFM成像同时控制地形起伏，研究了开关铁电畴上方电场起伏的动力学。为了解释图像对比度，本文讨论了一个简单的铁电薄膜模型，该模型考虑了薄膜的反射极化、表面电荷和界面功函数，并利用静电力显微镜（EFM）研究了超薄铁电Langmuir-Blodgett薄膜。薄膜沉积的铁电聚合物的单层从水表面到覆盖有Al电极的Si衬底上的后续转移。通过在尖端和Al电极之间施加电压来局部切换膜。通过EFM成像同时控制地形起伏，研究了开关铁电畴上方电场起伏的动力学。为了解释图像对比度的一个简单的模型为薄铁电薄膜进行了讨论，其中考虑到反射极化的膜，表面电荷，和界面功函数。
Ultrathin ferroelectric Langmuir–Blodgett films are studied using an electrostatic force microscope (EFM). The films were deposited by a subsequent transfer of monolayers of a ferroelectric polymer from the water surface onto Si substrates covered with Al electrodes. A film was switched locally by a voltage applied between a tip and the Al electrode. The dynamics of the electric field relief above a switched ferroelectric domain is studied by EFM imaging with simultaneous control of the topographic relief. In order to explain an image contrast a simple model for a thin ferroelectric film is discussed which takes into account the remanent polarization of the film, the surface charge, and interface work functions.Ultrathin ferroelectric Langmuir–Blodgett films are studied using an electrostatic force microscope (EFM). The films were deposited by a subsequent transfer of monolayers of a ferroelectric polymer from the water surface onto Si substrates covered with Al electrodes. A film was switched locally by a voltage applied between a tip and the Al electrode. The dynamics of the electric field relief above a switched ferroelectric domain is studied by EFM imaging with simultaneous control of the topographic relief. In order to explain an image contrast a simple model for a thin ferroelectric film is discussed which takes into account the remanent polarization of the film, the surface charge, and interface work functions.