Band offsets of Er2O3 films epitaxially grown on Si substrates
Band offsets of Er2O3 films epitaxially grown on Si substrates
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DOI：
10.1063/1.2196476
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发表时间：
2006-04
影响因子：
4
通讯作者：
Y. Zhu;Sun Chen;R. Xu;Z. Fang;J. Zhao;Y. L. Fan;Xiliang Yang;Zheng Jiang
中科院分区：
文献类型：
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作者：
Y. Zhu;Sun Chen;R. Xu;Z. Fang;J. Zhao;Y. L. Fan;Xiliang Yang;Zheng Jiang
报道了用分子束外延技术在Si衬底上外延生长的高k Er_2O_3薄膜的能带取向的实验数据。用X射线光电子能谱测量了Er_2O_3相对于Si的价带和导带偏移，分别为3.1± 0.1eV和3.5±0.3eV，表明在导带和价带处大致对称。测得Er_2O_3的禁带宽度为7.6±0.3eV。从能带偏移的角度来看，Er_2O_3是一种很有前途的高k栅外延材料。本文报道了用分子束外延技术在Si衬底上外延生长的高k Er_2O_3薄膜的能带取向的实验数据。用X射线光电子能谱测量了Er_2O_3相对于Si的价带和导带偏移，分别为3.1± 0.1eV和3.5±0.3eV，表明在导带和价带处大致对称。测得Er_2O_3的禁带宽度为7.6±0.3eV。从能带偏移的角度来看，这些获得的数字表明，Er2O3可能是一个有前途的候选人的高k栅双稳态。
The experimental data on band alignments of high-k Er2O3 films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er2O3 to Si are obtained to be 3.1±0.1 and 3.5±0.3eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er2O3 is determined to be 7.6±0.3eV. From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics.The experimental data on band alignments of high-k Er2O3 films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er2O3 to Si are obtained to be 3.1±0.1 and 3.5±0.3eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er2O3 is determined to be 7.6±0.3eV. From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics.