Negative differential thermal conductance in a borophane normal metal–superconductor junction
Negative differential thermal conductance in a borophane normal metal–superconductor junction
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DOI：
10.1088/1361-6668/ab3caf
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发表时间：
2019-09
影响因子：
3.6
通讯作者：
M. Zare
中科院分区：
文献类型：
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作者：
M. Zare
利用扩展的Blonder-Tinkham-Klapwijk方法研究了倾斜各向异性Dirac锥材料borophane的正常金属/超导体（NS）结中的电荷和热输运.尽管硼钒NS结的正常金属和超导体侧的费米波矢存在较大的失配，但在正常入射下，电子-空穴转换以单位概率发生。此外，在重掺杂超导体系中，对于重掺杂正常硼杂环烷烃，几乎在任何入射角下，电子-空穴转换都以单位概率发生。发现微分Andreev电导对费米能和激发能的依赖性，给了我们一个区分镜面反射和逆Andreev反射的把手。我们数值计算发现，独立的费米能量，在borophane的微分热导的温度依赖性可以建模为一个反高斯函数，反映了d波对称性的borophane超导体。我们提出了一个方案，实现负微分热导，作为热电路的关键组成部分，在中间费米能量。我们的研究结果将有潜在的应用，在开发borophane为基础的热管理和信号操纵介观结构，如热晶体管，热二极管，和热逻辑门。
We study the charge and heat transport in a normal metal/superconductor (NS) junction of the tilted anisotropic Dirac cone material borophane, using the extended Blonder–Tinkham–Klapwijk formalism. In spite of the large mismatch in the Fermi wave vector of the normal metal and superconductor sides of the borophane NS junction, the electron–hole conversion happens with unit probability at normal incidences. Furthermore, in the heavily doped superconducting regime, for heavily doped normal borophane, the electron–hole conversion happens with unit probability, at almost any incident angle. Finding the dependence of the differential Andreev conductance on the Fermi energy and excitation energy gives us a handle to distinguish specular from retro Andreev reflection. We numerically find that, independent of the Fermi energy, the temperature dependence of the differential thermal conductance in borophane can be modelled as an inverse Gaussian function, reflecting the d-wave symmetry of the borophane superconductor. We propose a scheme for achieving negative differential thermal conductance, as a key building block of thermal circuits, at intermediate Fermi energies. Our findings will have potential applications in developing borophane-based thermal management and signal manipulation mesoscopic structures such as heat transistors, heat diodes, and thermal logic gates.