Trap filled limit of conducting organic materials
Trap filled limit of conducting organic materials
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DOI：
10.1063/1.1503863
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发表时间：
2002-10-01
影响因子：
3.2
通讯作者：
Willander, M
中科院分区：
文献类型：
--
作者：
Jain, SC;Kapoor, AK;Willander, M
根据含有指数陷阱的导电有机材料中的输运的近似理论，ln J对ln V的曲线是斜率为l=T-C/T的直线，其中T-C是陷阱分布的特征温度。在这个理论中，假设俘获空穴的浓度p（t）比自由空穴的浓度p大得多。我们的实验和最近的文献结果表明，在高的外加电压下，所观察到的ln J与ln V的曲线偏离直线和弯曲下来。本文给出的数值解表明，在高电压下，p对空间电荷的贡献不能忽略。计算的ln J与ln V曲线确实向下弯曲，与我们的实验结果一致。当施加的电压接近无穷大时，电流渐近地接近充满陷阱的极限。(C)2002年美国物理学会。
According to the approximate theory of transport in a conducting organic material containing exponential traps, ln J versus ln V plots are straight lines with slope l=T-C/T, where T-C is the characteristic temperature of the trap distribution. It is assumed in this theory that the concentration p(t) of trapped holes is much larger than the concentration p of free holes. Our experiments and recent literature results show that at high applied voltages the observed ln J versus ln V plots deviate from the straight lines and bend down. The numerical solution presented in this article shows that at high voltages the contribution of p to the space charge does not remain negligible. Calculated ln J versus ln V plots do bend down consistent with our experimental results. The current approaches the trap-filled limit asymptotically as the applied voltage approaches infinity. (C) 2002 American Institute of Physics.